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4.8W DC/DC Converter supports 2 sets of IGBT Drivers - QA_HD2-R3 / QA_HCD2-R3 Series

Introduction

MORNSUN has the 3rd generation DC/DC converter QA-R3/QA_C-R3 series for IGBT/SiC MOSFET drivers. By adopting the newest power technology of internal asymmetric voltage output, we launched the QA_HD2-R3 / QA_HCD2-R3 series this March. One module can supply power to two sets of drivers, greatly reducing the comprehensive cost, which is the cost-efficient solution for the applications of new energy equipment such as EV chargers and PV SVG systems.

4.8W DC/DC Converter supports 2 sets of IGBT Drivers - QA_HD2-R3 / QA_HCD2-R3 Series.jpg

Advantages

1. 5000VAC high isolation voltage (Reinforced insulation)

This series can provide two sets of isolated output voltage, output 1 - output 2 isolation voltage up to 3750VAC, while the input-output isolation voltage up to 5000VAC, which is better than the mainstream products on the market. They meet the reinforced insulation design requirement and greatly enhanced reliability.


2. Continuous barrier withstands voltage 1700V

The product design is based on the IEC-61800-5-1 standard, meeting the continuous barrier withstand voltage of 1700V, and the application range can cover IGBT/SiC MOSFET devices of 1700V and below. The primary and secondary electrical gap/ creepage distance is up to 22.36mm (typ.).


3. High performance

① Supports two sets of drivers and meets half-bridge rectifier application requirements

② Low ripple & noise: 50mVpp

③ Max. Capacitive Load: 2200µF

④ Capacitance: 4.2pF (typ.)

⑤ High efficiency of up to 85%


4. High cost-efficient

One module supplies power to two sets of drivers, greatly reducing the comprehensive cost. What’s more, this series adopts the power technology of internal asymmetric voltage output to minimize the drive loss of IGBT/SIC MOSFETs.


Applications

As a DC/DC module for IGBT/SiC MOSFET driver, QA series can be used to drive IGBT/SiC MOSFET devices in PV inverters, motor drives, EV charger and other applications.

DC/DC module for IGBT/SiC MOSFET driver applications.jpg


Taking the PV SVG system as an example, QA series can be used together with the drive IC to drive the back-end IGBT devices to achieve effective operation of the system.QA series for PV SVG system.jpg

PS: QA-T-R3 (2.4W) with SMD package is in development. For more information please CONTACT us or request a SAMPLE.


Features

  • 5000VAC high isolation voltage (Reinforced insulation)

  • Partial Discharge 1700V

  • CMTI>200kV/µs

  • Max. Capacitive Load: 2200µF

  • Capacitance: 4.2pF (typ.)

  • High efficiency up to 85%

  • DIP package

  • Operating temperature range: -40℃ to +105℃

  • Continuous short-circuit protection

* 製品ニュースは参考のみで、ディテールの情報はデータシートをご覧ください。
具体的な製品スペック情報について、データシートをご参考ください。

シリーズ 入力電圧(VDC) 出力電流 動作温度(℃) 正出力電圧(VDC) 負出力電圧(VDC) 効率% 絶縁電圧(VAC) パッケージ 機能説明 3D见取り図 認証 仕様規格書 購入
QA123HCD2-1504R3 12(10.8-13.2) ±90,±110,±120 -40~105℃ 15 -4 85 5000 DIP Short-Circuit Protection - -
QA123HCD2-1803R3 12(10.8-13.2) ±90,±110,±120 -40~105℃ 18 -3 85 5000 DIP Short-Circuit Protection - -
QA123HCD2-2005R3 12(10.8-13.2) ±90,±110,±120 -40~105℃ 20 -5 85 5000 DIP Short-Circuit Protection - -
QA123HD2-1509R3 12 (10.8-13.2) ±100 -40℃ to +105℃ 15 -9 85 5000 DIP Short-Circuit Protection - -
QA153HCD2-1504R3 15(13.5-16.5) ±90,±110,±120 -40~105℃ 15 -4 85 5000 DIP Short-Circuit Protection - -
QA153HCD2-1803R3 15(13.5-16.5) ±90,±110,±120 -40~105℃ 18 -3 85 5000 DIP Short-Circuit Protection - -
QA153HCD2-2005R3 15(13.5-16.5) ±90,±110,±120 -40~105℃ 20 -5 85 5000 DIP Short-Circuit Protection - -
QA153HD2-1509R3 15 (13.5-16.5) ±100 -40℃ to +105℃ 15 -9 85 5000 DIP Short-Circuit Protection - -
QA243HCD2-1504R3 24(21.6-26.4) ±90,±110,±120 -40~105℃ 15 -4 80 5000 DIP Short-Circuit Protection - -
QA243HCD2-1803R3 24(21.6-26.4) ±90,±110,±120 -40~105℃ 18 -3 80 5000 DIP Short-Circuit Protection - -
QA243HCD2-2005R3 24(21.6-26.4) ±90,±110,±120 -40~105℃ 20 -5 80 5000 DIP Short-Circuit Protection - -
QA243HD2-1509R3 24 (21.6-26.4) ±100 -40℃ to +105℃ 15 -9 80 5000 DIP Short-Circuit Protection - -

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